Pushing Power Density Limits using SiC-JFet-based Matrix Converter

The omnipresent trend of increasing the power density of inverter technology lead to new developments in semiconductor material. As most of the benefits come from higher operating junction temperatures, it is mandatory to restrict the inverter design to peripheral components capable to work in these high temperature conditions. Eliminating the needs for large DC-link capacitors, the matrix converter poses a viable alternative. The present paper describes a SiC JFET based Matrix Converter achieving a power density of 20kW/dm with forced air cooling only. The prototype built is described in detail emphasizing the new technologies used and measured data gathered from the demonstrator is presented.